- 90 - mbr10100ct thru MBR10200CT 10.0 amps. schottky barrier rectifiers voltage range 100 to 200 volts current 10.0 amperes features plastic material used carries underwriters laboratory classifications 94v-0 metal silicon junction, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring for overvoltage protection high temperature soldering guaranteed: 260 o c/10 seconds,0.25?(6.35mm)from case mechanical data cases: jedec to-220 molded plastic body terminals: lead solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 5 in. - lbs. max weight: 0.08 ounce, 2.24 grams to-220 dimensions in inches and (millimeters) maximum ratings and electrical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol mbr 10100ct mbr 10150ct mbr 10200ct units maximum recurrent peak reverse voltage v rrm 100 150 200 v maximum rms voltage v rms 70 105 140 v maximum dc blocking voltage v dc 100 150 200 v maximum average forward rectified current at tc=125 o c i (av) 10 a peak repetitive forward current (rated v r , square wave, 20khz) at tc=125 o c i frm 32.0 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (jedec method ) i fsm 120 a peak repetitive reverse surge current (note 1) i rrm 0.5 a maximum instantaneous forward voltage at: (note 2) i f =5a, t c =25 o c i f =5a, t c =125 o c v f 0.85 0.75 0.88 0.78 0.99 0.87 v maximum instantaneous reverse current@ tc =25 at rated dc blocking voltage (note 2) i r 0.008 0.2 ma voltage rate of change (rated v r ) dv/dt 10,000 v/us m aximum t ypical t hermal resistance (note 3) r jc 1.5 /w operating junction temperature range t j -65 to +150 storage temperature range t stg -65 to +175 notes: 1. 2.0us pulse width, f=1.0 khz 2. pulse test: 300us pulse width, 1% duty cycle 3. thermal resistance from junction to case per leg, mount on heatsink size of 2 in x 3 in x 0.25 in al-plate.
-91- ratings and characteristic curves (mbr10100ct thru ) MBR10200CT fig.1- forward current derating curve average for ward current . (a) 0 50 100 150 0 2 10 case temperature. ( c) o resistive or inductive load fig.2- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 10 100 30 60 0 90 150 120 180 number of cycles at 60hz tj=tj max. 8.3ms single half sine wave jedec method fig.3- typical instantaneous forward characteristics instantaneous for ward current . (a) 0.6 0.8 1.0 1.1 0.9 0.7 0.5 0.4 0.3 0.2 0.1 0 1.2 0.1 0.01 1 10 40 forward voltage. (v) pulse width=300 s 1% duty cycle tj=25 c 0 tj=125 c 0 fig.4- typical reverse characteristics instantaneous reverse current . (ma) 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage. (%) 0.001 0.1 0.01 1 10 50 tj=125 c 0 tj=25 c 0 tj=75 c 0 fig.6- typical transient thermal characteristics transient thermal impedance. ( c/w) o 1 0.01 0.1 10 100 0.1 10.0 1 100 t, pulse duration. (sec) fig.5- typical junction capacitance junction cap acitance.(pf) 0.1 1 10 100 100 1,000 6,000 reverse voltage. (v) tj=25 c f=1.0mhz vsig=50mvp-p 0 8 6 4 mbr10100ct mbr10150ct MBR10200CT
|
